- Biography
PhD, Physics, Universite Claude Bernard Lyon I, 1990
MS (DEA), Nuclear and Atomic Physics and Apps., Universite Claude Bernard Lyon I, 19862006 - Present Associate Professor, Department of Materials Science and Eng., UNT
2001 - 2006 Assistant Professor, Department of Materials Science and Eng., UNT
- Research
- Growth, Processing and Characterization of inorganic thin film nanostructures for Micro/Nano-electronic and Photovoltaic Applications
- Nanoscale Interfacial studies of complex multi-layered nanostructures: Size effects on Thermal Stability, Diffusion and Reactions,..
- Sputter Deposition, Chemical Vapor Deposition and Thermal Evaporation of Inorganic Thin Films:High-k Dielectrics, Advanced Metal Electrodes, Diffusion Barriers
- Atomic transport, Oxidation and Nitridation studies of thin film nanostructures
- Hydrogen and Impurity Defects in inorganic thin films
- Plasma and Ion Irradiation/modification of materials
- Advanced Ion Beam Analysis methods: RBS, NRA, ERDA, PIXE, Channeling
- X-ray Photoelectron Scpectroscopy, Ultra-Violet Spectroscopy and Auger Electron Spectroscopy
- Publications
- P. R. Poudel, P.P. Poudel, Sharma, B.P., Hwang, J.Y., B. Rout, M. El Bouanani, F.D. McDaniel.“Synthesis of buried layers of β-SiC in Si by multiple energy carbon ion implantations and post thermal annealing”; Thin Solid Films, v 524, p 35-38, December 1, 2012
- P. R. Poudel, P.P. Poudel, B. Rout, M. El Bouanani, F.D. McDaniel “An XPS study to investigate the dependence of carbon ion fluences in the formation of buried SiC”; Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, v 283, p 93-96, July 15, 2012
- H.N. Alshareef, C. Huffman, H.C. Wen, M. Quevedo-Lopez, B.E. Gnade and M. El Bouanani, “Impact of Carbon Incorporation on the Effective Work Function of Metal Nitride Gate Electrodes”, Electrochemical & Solid State Letters, 11(7), p182-184, (2008).
- P. Pelicon, M. El Bouanani, G.V. Ravi Prasad , A. Razpet, B. N. Guo, D. Birt, J. L. Duggan and F. D. McDaniel, “Depth of origin of desorbed boron In heavy ion irradiation of ultra-shallow boron implanted Si”, Radiation Effects and Defects in Solids, Vol 161, No. 8, August 2006, 487-494.
- M. M. Hussain, M. A. Quevedo-Lopez, H. N. Alshareef, H.C. Wen, D. Larison, B. Gnade and M. El Bouanani, “Thermal annealing effects on a representative high-k/metal film stack”, Semiconductor Science and Technology, 21 (2006), 1437-1440.
- H.N. Alshareef, H.C. Wen, H.R. Harris, K. Choi, H.F. Luan, P. Lysaght, P. Majhi, B.H. Lee, M. El Bouanani, V. Ukirde, “Modulation of the work function of silicon gate electrode using thin TaN interlayers”; Appl. Phys. Lett., 87, 521091 (2005).
- T. N. Arunagiri, Y. Zhang, O. Chyan, M. El Bouanani, M. J. Kim, C. T. Wu, K. H. Chen, and L. C. Chen, “A 5 nm Ruthenium Thin Film as a Directly Plate-able Copper Diffusion Barrier”, Appl. Phys. Lett., 86, 83104 (2005).
- S. Addepalli, P. Sivasubramani, M. El Bouanani, M. J. Kim, B. E. Gnade, and R. M. Wallace, “Deposition of Hf-silicate gate dielectric on SixGe1-x(100): detection of interfacial layer growth”, J. Vac. Science Tech. A22, 616-623 (2004).
- P. Punchaipetch, G. Pant, M. Quevedo-Lopez, C. Yao, M. El Bouanani, M. J. Kim, R. M. Wallace, and B. E. Gnade. “Low temperature deposition of hafnium silicate gate dielectrics”, IEEE Journal of Selected Topics in Quantum Electronics 10, 89-100 (2004)
- M.A. Quevedo-Lopez, M. El Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, L.J. Chambers and L. Colombo, “Effect of N incorporation on boron penetration from p+ polycrystalline Si through HfSixOy films” Appl. Phys. Lett. 82, 4669 (2003).
- P. Punchaipetch, G. Pant, M.A. Quevedo-Lopez, H. Zhang, M. El Bouanani, M.J. Kim, R.M. Wallace and B.E. Gnade, “Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide”, Thin Solid Films 425 (2003) 68-71.
- M.A. Quevedo-Lopez, M. El Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, “Boron penetration studies from p+ polycrystalline Si through HfSixOy,” Appl. Phys. Lett. 81, 1074 (2002).
- M.A. Quevedo-Lopez, M. El Bouanani, M.J. Kim, B.E. Gnade, R.M. Wallace, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, “Phosphorus and arsenic penetration studies through HfSixOy, and HfSixOyNz films,” Appl. Phys. Lett. 81, 1609 (2002).
- M. A. Quevedo-Lopez, M. El Bouanani, R. M. Wallace and B. E. Gnade, “Wet Chemical Etching Studies of Zr and Hf-silicate Gate Dielectrics,” J. Vac. Sci. and Technol. A 20(6), 1891(2002).
- M. A. Quevedo-Lopez, M. El Bouanani, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan,and L. Colombo, “Interdiffusion Studies for HfSixOy and ZrSixOy on Si,” J. of Appl. Phys. 92, 3540 (2002).
- F.D. McDaniel, B.L. Doyle, C. H. Seager, D.S. Walsh, G. Vizkelethy, D.K Brice, C. Yang, P. Rossi, M. Nigham, M. El Bouanani, G.V. Ravi Prasad, J.C. Schwartz, L.T. Mitchell and J.L. Duggan, “Ionoluminescence decay measured with single ions”, Nucl. Instr. and Meth. B190, 1 (2002).
- M. Quevedo-Lopez, M. El Bouanani, S. Addepalli, C. Huang, J.L. Duggan, B.E. Gnade, R.M. Wallace, L. Colombo, M. Douglas, and M. Visokay, “Hafnium diffusion studies of hafnium silicate into silicon”, Appl. Phys. Lett. 79, 4192 (2001).
- M. Quevedo-Lopez, M. El Bouanani, S. Addepalli, J.L. Duggan, B.E. Gnade, R.M. Wallace, M. Visokay, M. Douglas, M.J. Bevan and L. Colombo, “Thermally induced Zr incorporation into Si from zirconium silicate thin films”, Appl. Phys. Lett. 79, (2001) 2958.
- C. Yang, B.L. Doyle, M. El Bouanani, B.N. Guo, M. Nigham, J.L. Duggan and F.D. McDaniel, “Luminescent Layers for Ion-Photon Emission Microscopy”, Nucl. Instr. and Meth. In Physics Research B 181 (2001) 329-334. #E
- B.N. Guo, M. El Bouanani, S.N. Renfrow, M. Nigham, D.S. Walsh, B.L. Doyle, J.L. Duggan and F.D. McDaniel, “Diffusion-time-resolved ion-beam-induced charge collection from stripe-like test junctions induced by heavy-ion microbeam”, Nucl. Instr. and Meth. In Physics Research B 181 (2001) 315-319.
- A.V. Kuznetsov, E.J. van Veldhuizen, L. Westerberg, V.G. Lyapin, K. Aleklett, W. Loveland, J. Bondorf, B. Jakobsson, H.J. Whitlow and M. El Bouanani, “A compact Ultra-High Vacuum (UHV) compatible instrument for time of flight-energy measurements of slow heavy reaction products”, Nucl. Instr. and Meth. A452 (3) (2000) pp. 525-532
- S.A. Datar, B.N. Guo, M. Nigam, D. Necsoiu, Y.J. Zhai, D.E. Smith, C. Yang, M. El Bouanani and F.D. McDaniel, “High sensitivity measurements of As as an impurity in GexSi1-x/Si layered alloys using trace element accelerator mass spectrometry (TEAMS)”, Applied Physics Letters, Vol. 77, No. 4, (2000) 3974
- B.N. Guo, S.N. Renfrow, B.L. Doyle, S.D. Walsh, T.J. Aton, M. El Bouanani, J.L. Duggan and F.D. McDaniel, “Ion Beam Induced Charge Collection (IBICC) Studies on Integrated Circuits Test Structures using a 10 MeV Carbon Microbeam”, Nucl. Instr. and Meth. B 158 (1999) 264-269.
- Y. Zhang, M. Hult, L. Persson, H.J. Whitlow, M. Andersson, I.F. Bubb, M. El Bouanani, P.N. Johnston, S.R. Walker, D.D. Cohen, N. Dytlewski, C. Zaring and M. Östling, “Mass and energy dispersive recoil spectrometry studies of low temperature interfacial reactions in the Si/Pd/GaAs and Si/Pd/AlxGa(1-x)As”, Nucl. Instr. and Meth. B136-138 (1998) 719-723.
- H.J. Whitlow, S.J. Roosendaal, M. El Bouanani, R. Ghetti, P.N. Johnston, B. Jakobsson, R. Hellborg, H. Petersson, P. Omling, Z. Wang and the CHIC collaboration, “Effects of Energy Deposition by Nuclear Scattering in Silicon p-i-n diode detectors”, Nucl. Instr. and Meth. B135 (1998) 523-531.
- L. Persson, M. El Bouanani, M. Hult, H.J. Whitlow,, M. Andersson, I.F. Bubb, P.N. Johnston, S.R. Walker, D.D. Cohen, N. Dytlewski, M. Hult C. Zaring and M. Östling. “Interfacial Reaction Studies of Cr, Ni, Ti and Pt Metallisation on InP”. Journal of Applied Physics 80(6):3346-3354 (1996).
- M. Hult, L. Persson, M. El Bouanani, H.J. Whitlow, M. Andersson, M. Östling, C. Zaring, N. Lundberg, K. Georgsson, D.D. Cohen, N. Dytlewski, P.N. Johnston and S. R. Walker, “Formation of thin films of CoSi2 on GaAs”. Journal of Applied Physics 77:2435-2443 (1995).
- M. El Bouanani, H.J. Whitlow, M. Hult, L. Persson, M. Andersson, E. Swietlicki, M. Östling, C. Zaring, P.N. Johnston, S.R. Walker, I.F. Bubb, D.D. Cohen and N. Dytlewski, “Multivariate analysis method for energy calibration and improved mass assignment in recoil spectrometry. Nucl. Instr. and Meth. B94 (1994)530-536
- H. Artigalas, A. Chevarier, N. Chevarier, M. El Bouanani, E. Gerlic, N. Moncoffre, B. Roux, M. Stern and J. Tousset, “Nitrogen profiling in nitride films and nitrogen implanted samples using the 14N(,) and 14N( ,p) reactions at 6 MeV incident energy”. Nucl. Instr. and Meth. B66(1992)237-241
- M. El Bouanani, A. Chevarier, N. Chevarier, E. Gerlic, H. Jaffrezic and M. Stern , “Argon irradiation damage at Cu/Al2O3 interface for different alumina structures”, Nucl. Instr. and Meth. B50(1990)431-435.
- M. El Bouanani, A. Chevarier, N. Chevarier, E. Gerlic, N. Moncoffre, M. Stern, J.C. Magne and B. Aune, “Ion bombardment effect on Nb/Cu interface studied by RBS, NRS and SEM techniques”, Nucl. Instr. and Meth. B45(1990)651.